Physics possibilities at India-based Neutrino Observatory

In this talk I review the physics possible at India-based Neutrino Observatory (INO). I discuss the improvement in the precision of currently known quantities and the possibility measuring the presently unknown quantities.     

Annealing and measurement temperature dependence of W2B5-based rectifying contacts to n-GaN

The thermal stability and measurement temperature dependence of Schottky contact characteristics on n-GaN using a W₂B₅/Ti/Au metallization scheme was studied using current-voltage (I-V), scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) measurements. The elemental profile obtained from samples annealed at 350 °C showed some titanium diffusion into the gold layer but little other difference from the as-deposited wafer. Annealing at 700 °C produced significant diffusion of titanium. The Schottky barrier height increased with anneal temperature up to 200 °C, reaching a maximum value of 0.65 eV, but decreased at higher annealing temperatures. The reverse breakdown voltage from diodes fabricated using the W₂B₅-based contacts showed a similar dependence. The reverse current magnitude was larger than predicted by thermionic emission alone. The barrier height showed only minor changes with measurement temperature up to 150 °C.     

Some applications of thermal field theory to quark-gluon plasma

We briefly introduce the thermal field theory within imaginary time formalism, the hard thermal loop perturbation theory and some of its applications to the physics of the quark-gluon plasma, possibly created in relativistic heavy-ion collisions     

<Emphasis Type="Italic">Comment on</Emphasis>¶Low temperature specific heat of blue bronze K <Emphasis Type="Bold">0.30</Emphasis>MoO <Emphasis Type="Bold">3</Emphasis>, by J. Odin,J.C. Lasjaunias,K. Biljaković, K. Hasselbach,and P. Monceau

Eur. Phys. J. B 24, 315 (2001) Here we comment on a recently published paper on the presence of a phason contribution in the low temperature heat capacity data of the charge-density-wave compounds K_0.3MoO₃ and (TaSe₄)₂I. We have shown that the anomaly in the C _P / T ³ data reported by Odin et al. is straightforwardly interpreted in terms of low energy phonon modes resulting from the peculiar topology of these compounds. Received 21 February 2002 Published online 19 July 2002     

高功率双包层光纤激光器受激拉曼散射和热效应的理论研究

 受激拉曼散射和热效应会限制光纤激光器功率的提高。利用高功率光纤激光器的速率方程和热传导方程，理论研究了双端泵浦和分布泵浦下双包层光纤激光器的受激拉曼散射和热效应，得到了光纤中的泵浦光、激光和斯托克斯光的功率分布，光纤激光器的输出特性以及光纤中的温度分布。分析表明，当泵浦功率增大到一定值时，光纤激光器中出现SRS，一部分激光功率会转移给斯托克斯光，影响激光功率进一步提高;与双端泵浦方式相比，分布泵浦下光纤激光器的斜率效率和最大输出功率相差不大，但是，光纤中的温度分布被有效地降低，因此，分布泵浦方式更为有效。     

热容模式下激光介质的动态光学畸变

 开展了热容模式下激光介质动态光学畸变研究，初步分析了温度梯度、光弹效应及介质端面变形对整个波前畸变带来的影响，并将光学畸变转化为谐振腔损耗，数值模拟了热容激光器输出功率随时间的变化规律，模拟结果表明：当激光器工作温度低于400 K时，由粒子数玻耳兹曼分布引起的功率下降可以忽略，动态热效应是实验中热容激光器输出功率随时间快速下降的原因。     

磁场对四端量子波导中电子输运性质的影响

采用模匹配方法，研究了非均匀磁场下开放的四端量子波导中的电子输运性质. 结果表明，从一端入射的电子可以透射到两个与之垂直的输出端和一个与之平行的输出端. 在没有外加磁场的情况下，两个垂直输出端的输运概率是相同的，但垂直端与水平端的输运概率不同；在外加磁场下，由于磁边缘态效应，两个垂直输出端的输运概率也有着相当大的差别. 通过施加不同的磁场，我们能获得丰富的电子输运结构，如台阶，宽谷，尖峰等；通过调节磁场的大小和比例以及结构参数可控制该量子结构在各输出端的输运概率. 关键词： 电子输运 介观体系 磁效应     

Adhesion studies of latex film surfaces on the meso- and nanoscale

In this paper the effects of surface roughness and annealing temperature (T) of latex coating films on adhesion are discussed for the different stages of the film formation process. The surface free energy of latex films was assessed in terms of practical work of adhesion (W) (or adherence) using a custom-built adhesion-testing device (ATD), atomic force microscopy (AFM), and contact angle measurements. For preannealed latex films surface roughness averages (R_a) were determined from AFM height images and were related to the values of W obtained from ATD measurements at room temperature. The results obtained using these tests exhibiting surface behavior on different length scales indicate a dependence of the measured adhesion on surface roughness and temperature, as well as on the length scale of the measurements.First preannealed samples were studied, which were obtained by heat treatment above the respective glass transition temperatures (T_g). Increasing the temperature of preannealing resulted in a decrease of the adherence observed in ATD experiments at room temperature. However, on the nanoscale, using AFM, no significant variation of the adherence was observed. This observation can be explained by roughness arguments. Preannealing decreases roughness which results in lower adherence values measured by ATD while for essentially single asperity AFM experiments roughness has an insignificant effect. Specimens were also annealed over a constant period of time (90 min) at different temperatures. At the end of the heat treatment, adhesion was measured at the treatment temperature by ATD. The amplified effect of temperature observed in this case on adherence is attributed to the combination of roughness decrease and increasing test temperature. In a third set of experiments completely annealed samples were studied by ATD as well as by AFM as a function of temperature. With increasing T values ATD showed a decrease in adherence, which is attributed to a decreasing surface free energy of the annealed films at elevated T values. AFM, on the other hand, showed an opposite trend which is assigned to increasing penetration of the tip into the tip/wetting polymer samples versus increasing temperature. Finally, annealing isotherms as a function of time were investigated by ATD in situ at different temperatures. This last set of experiments allowed us to optimize annealing time and temperature to achieve complete curing.     

Many-body effects in diffusion-limited kinetics

We review a novel approach to treating many-body effects in diffusion-limited kinetics. The derivation of the general expression for the survival probability of a Brownian particle in the presence of randomly distributed traps is given. The reduction of this expression to both the Smoluchowski solultion and the wellknown asymptotic behavior is demonstrated. It is shown that the Smoluchowski solution gives a lower bound for the particle survival probability. The correction to the Smoluchowski solution which takes into account the particle death slowdown in the initial process stage is described. The steady-state rate-constant concentration dependence and the reflection of many-body effects in it are discussed in detail.